Simulation and Analysis on High-Frequency TSV Packaging Structure through 3D Field Solver

• Main Authors: Jyun-Han Liu, 柳鈞瀚
• Other Authors: Ping-Yu Kuei
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/78fqcc

碩士 === 國防大學理工學院 === 電子工程碩士班 === 101 === According to the transmission line theory, the purpose of this research is to study the signal decay of the Through Silicon Via (TSV) structure in high frequency domain. In addition, based on the studies on the samples with geometric dimensions, the electrical circuit designers can realize the RF decay phenomena on TSV with different size and different structures. With the existing TSV models and the measurement results in the literature, this research first uses High Frequency Structure Simulator (HFSS) to design the complex TSV structures, and the results and its trend are next compared with the literature results for verification. Since the purpose of this study includes the studying on more complex TSV structures to meet the actual circuit connection case, five groups of high frequency TSV chain structures were then design, and their high frequency S-parameters were finally observe and analyzed. With the results from this research, the designers can foresee the characteristics of the TSV structures with different geometric designs.