Investigating the properties of InN epilayers grown with different temperature by photoluminescene
碩士 === 元智大學 === 光電工程研究所 === 99 === In this article,we have grown InN epilayers on sapphire substrate with GaN buffer layer, and the V/III ratio is fixed at 1:1,growth temperature varied from 495°C to 525°C. After growing,we investigated the three samples by SEM, and observed that with temperature in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69624990588237748451 |