Study of Wet Etching at a Patterned Sapphire Substrate by Using a SiNx Barrier Layer
碩士 === 元智大學 === 光電工程研究所 === 99 === In this study, silicon nitride is used to replace silicon dioxide as a barrier to form a patterned sapphire substrate. By etching, we obtained the result of a patterned sapphire substrate whose depth is 1181 nm. Besides, there is a fine layer of silicon nitride on...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56722254334782262225 |