Electrical Characteristic and Reliability of Zr/HfAlO Stack High-K Gate Dielectric

碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 99 === High-dielectric constant (High-K) material has been used to replace the conventional ultra-thin SiO2 because it reveals large direct tunneling leakage current, and leads to large power consumption problem. Many kinds of High-k materials can be used as the gat...

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Bibliographic Details
Main Authors: Cheng-yin Kuan, 管政穎
Other Authors: Yang-hua Chang
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/15168017799938186405