Analysis of current characteristics and thermal effect on InGaAsSb HBTs
碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 99 === The main materials of heterojunction bipolar transistor is III-V because the mobility of group III-V. HBT has great high- frequency characteristics and current drivability. It has good linearity when it is used in amplifier. Also, it gets a great possibilitie...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69405531261884023914 |