Studies of bias enhanced growth of nanocrystalline diamond films by microwave plasma chemical vapor deposition
碩士 === 淡江大學 === 物理學系碩士班 === 99 === Due to the mismatch in the lattice parameters of diamond and silicon, prenucleation process is necessary to grow diamond on the Si-substrate. The conventional way of nucleating the Si-substrates, the ultrasonication in diamond and Ti-powder solution, requires long...
Main Authors: | Kuan-Chin Tseng, 曾冠欽 |
---|---|
Other Authors: | 林諭男 |
Format: | Others |
Language: | zh-TW |
Published: |
2011
|
Online Access: | http://ndltd.ncl.edu.tw/handle/35996490373964767177 |
Similar Items
-
Review: Plasma-enhanced chemical vapor deposition of nanocrystalline diamond
by: Katsuyuki Okada
Published: (2007-01-01) -
Study on bias-enhanced nucleation and growth of diamond films by microwave plasma-enhanced chemical vapor deposition method
by: Kuoguang Perng, et al.
Published: (2002) -
Low Temperature Synthsis of Diamond Films by Microwave Plasma Chemical Vapor Deposition
by: Chang,Hsih Ming, et al.
Published: (1993) -
Tribological properties of nanocrystalline diamond films deposited by hot filament chemical vapor deposition
by: N. Kumar, et al.
Published: (2012-09-01) -
Diamond Nucleation on Cu by Using Microwave Plasma Chemical Vapor Deposition with a Biasing Pretreatmeat
by: kun lin chuang, et al.
Published: (2000)