Power Device Contact Aluminum Wet Etch Process Study

• Main Authors: Chih-Shien Chang, 張智賢
• Other Authors: 蘇昭瑾
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/cqsz99

碩士 === 國立臺北科技大學 === 有機高分子研究所 === 99 === Applications of Aluminum are used in semiconductor device as a connection between layout and also as a good ohmic contact between semiconductor surface and metal layer. Aluminum ohmic contact is related with contact area and silicide density, and it has no CD loss (Critical dimension loss) concern. Wet etch method can provide more high selectivity, high PPH (productive per hour), simple equipment design and low cost compare to plasma etch. So the evaluation of aluminum by wet etch can reduce cost and it increases the output for mass production. This approach was applied in D.O.E to analyze and optimize the aluminum wet etch process and equipment design. The obtained result showed that the high vacuum etch tank can remove reacted bubble immediately to avoid masking effect. The installation of robot system and keep tank temperature around 50 °C, which is more stable, uniform and faster etch rate. After 20 wafer mass run, Cpk value shows 1.12 which was confirmed from SPC chart. This result can be implemented to the mass production. In future, the installation of chemical auto spiking system can maintain the concentration as constant and the process capability will be better.