Reliability Study of High Resistive N-drift Region LDMOS Device
碩士 === 亞洲大學 === 資訊工程學系碩士班 === 99 === This article provides a method to significantly improve breakdown voltage and specific on-resistance in high resistivity drift region LDMOS by using PBL doping under the source terminal and the gate extended field plate technologies. The insertion of PBL aims at...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31097075047540701204 |