Fabrication and Characteristics Analysis of theK0.5Na0.5NbO3-based Ferroelectric Thin Films by theRF Sputtering Process

• Main Authors: Hsiu-Hsien Su, 蘇修賢
• Other Authors: Chien-Min Cheng
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/18934793279867826595

碩士 === 南台科技大學 === 電子工程系 === 99 === In this study, by the use of solid-state reaction, different contents of Li2CO3 and Ta2O5 are doped and substituted into the K0.5Na0.5NbO3-based ceramic to form K0.5Na0.5(Nb0.95Ta0.05)O3 and 0.97K0.5Na0.5NbO3-0.03LiNbO3 targets, respectively. And by the RF sputtering technique, the lead-free K0.5Na0.5NbO3, K0.5Na0.5(Nb0.95Ta0.05)O3, and 0.97K0.5Na0.5NbO3-0.03LiNbO3 thin films are deposited on the ITO glass substrate to form Metal-Ferroelectric-Metal (MFM) structures. The effects of the different sputtering parameters are investigated. The phase and surface micro-structure of the KNN thin films were obtained by the X-ray diffraction (XRD), atomic force microscope (AFM), and field-emission scanning electron microscope (FE-SEM), respectively. Furthermore, the impedance analyzer (Hp4294A) and the semiconductor parameter (Hp 4156C) are used to measure the I-V and C-V characteristics, respectively. From the measured results, the optimum oxygen concentration is 25%, and the optimum sputtering power is 130W.