| Summary: | 碩士 === 南台科技大學 === 電子工程系 === 99 === In this study, by the use of solid-state reaction, different contents of Li2CO3 and
Ta2O5 are doped and substituted into the K0.5Na0.5NbO3-based ceramic to form
K0.5Na0.5(Nb0.95Ta0.05)O3 and 0.97K0.5Na0.5NbO3-0.03LiNbO3 targets, respectively. And
by the RF sputtering technique, the lead-free K0.5Na0.5NbO3, K0.5Na0.5(Nb0.95Ta0.05)O3,
and 0.97K0.5Na0.5NbO3-0.03LiNbO3 thin films are deposited on the ITO glass substrate
to form Metal-Ferroelectric-Metal (MFM) structures. The effects of the different
sputtering parameters are investigated. The phase and surface micro-structure of the
KNN thin films were obtained by the X-ray diffraction (XRD), atomic force microscope
(AFM), and field-emission scanning electron microscope (FE-SEM), respectively.
Furthermore, the impedance analyzer (Hp4294A) and the semiconductor parameter (Hp
4156C) are used to measure the I-V and C-V characteristics, respectively. From the
measured results, the optimum oxygen concentration is 25%, and the optimum
sputtering power is 130W.
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