Development of white light emission device based on Silicon-Germanium Oxide
碩士 === 南台科技大學 === 光電工程系 === 99 === In this study, SixGeyO1-x-y films are deposited by radio-frequency reactive magnetron sputtering using Si/Ge target. During the growth, oxygen flow is fixed to 0.5 sccm. After growth, the SixGeyO1-x-y films are thermal annealed in vacuum. The annealing-induced evol...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
100
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/21438193755337702503 |