使用資料挖掘技術建置大尺寸高階光罩之關鍵尺寸斜線修正系統

• Main Author: 黃室榕
• Other Authors: 張祐城
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/80588837058485220470

碩士 === 僑光科技大學 === 資訊科技研究所 === 99 === In plain terms of mask manufacture procedure, it starts by applying photoresist onto quartz blanks which then will be drawn various geometry by using the devices of laser or electron beam. After the developing process, the exposed photoresist on the blanks will be removed and then the procedure goes through the etching process to eliminate the chrome which was not covered by the photoresist. Finally, we clean the remained photoresist and leave the chrome geometry on the blanks. On the other hand, panel manufacturers use the photomasks as the master mask of LCD panels in production. Currently, high-level large area photomasks are GTM (Gray Tone Mask), HTM (Half Tone Mask), and Slit mainly. The trend of high-level large area photomask is that the mask size is going larger and the design of line size and gap is going thinner. Presently, the line size and gap of Korean made high-level panel are as small as below 1um. These are very close to the limitation of laser writers. Besides, masks are quite large in size so it’s hard to conquer technically while the micro size design on the entire mask needs to follow its specification. As the result, there are greatly increased difficulties of mask making and we need a special graphic process to assist it. Eventually, photomask manufacturers can gain more profit if they can improve their technique and yield rate of high-level mask production. Usually, we need to convert the data before writing. Considering the side etching effect caused by the etching process, it is required that to apply process bias onto mask graphics in advance. The compensation design has no problem with vertical and horizontal graphics while inaccuracy may happen when applied on oblique graphics. We found there are two reasons to result in the critical dimension error of oblique graphics, one is the software of mask data handling, while compensate mask process bias, it will have a calculation error on oblique graphics, another is owing to the mask process, it will result in different oblique graphics error on different angle of oblique graphics.Comparing with vertical and horizontal graphics, for example, there will be a 125nm offset error on a 45 degree slope if we gave 300nm as the process bias value. The goal of this research is use data mining technique technology to develop a slope correction program to conquer the slope offset error caused by the process bias and promote the yield of producing high-level photomask.