A Study of nLDMOS Parameters Optimization in Latch-Up Prevention by Taguchi Method
碩士 === 國立聯合大學 === 電子工程學系碩士班 === 99 === For invented electronic products to change with each passing day, and semiconductor process progress day after day. The ESD(electrostatic discharge) problem will be serious with semiconductor scaling. HBM(Human Body Model) and CDM(Charge Device Model) issues ar...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91390330070180788578 |