Characterization of MgZnO thin films deposited by reactive dual ion beam sputter deposition

• Main Authors: Tzu-yen Chang, 張慈讌
• Other Authors: Liang -chiun Chao
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/enuwqf

碩士 === 國立臺灣科技大學 === 電子工程系 === 99 === MgxZn1-xO thin films with x = 0 ~ 0.46 has been deposited on Si (100), glass and quartz substrates by reactive dual ion beam sputtering deposition. XRD analysis shows that as x increases, a-axis lattice constant increases while the grain size decreases. As x reaches 0.40, the cubic phase becomes discernable. PL study of MgxZn1-xO thin films shows emission energy varying from 3.26 (x = 0) to 3.52 eV (x = 0.46). The blueshift of emission energy is attributed to Mg atoms replacing Zn atoms that lead to increased bandgap. The optical bnadgap of MgxZn1-xO thin film increases from 3.36 to 4.36 eV as x increases from 0 to 0.46. The electrical properties of MgxZn1-xO can be improved by doping witn nitrogen or annealing in nitrogen ambient. Under optimized conditions, the rejection ratio of photodetectors fabricated by nitrogen doped MgxZn1-xO exhibit a rejection ratio of ~ 10.