Effect of interface layer of TaON for Cu-SiO2 resistance switching
碩士 === 國立臺灣科技大學 === 科技管理所 === 99 === In our research, we fabricate Cu/Cu-SiO2/TaN and TaN/Cu-SiO2/TaN devices by sputter and co-sputter. From the result of electrical analyses, both Cu/Cu-SiO2/TaN and TaN/Cu-SiO2/TaN device show resistance switching property. Device which uses TaN as both top electr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/e4u9fg |