An investigation of the Si-Ge thermal boundary resistance in use of MD and wave packet methods
碩士 === 國立臺灣大學 === 機械工程學研究所 === 99 === This thesis employs the non-equilibrium molecular dynamics (NEMD) to investigate the thermal transport phenomena across both perfect and imperfect interfaces formed by two dielectric thin films (Si and Ge) at 500K. The conditions of imperfect interfaces, the int...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72612700467600166498 |