SiGe Epitaxial Growth by Ultra-high Vacuum Chemical Vapor Deposition and the Advanced Device Applications
博士 === 國立臺灣大學 === 電子工程學研究所 === 99 === SiGe epitaxial growth by ultra-high vacuum chemical vapor deposition has been investigated in this dissertation. The SiGe quantum dots (QDs) and nanorings were fabricated for the applications of the photodetectors, while the SiGe quantum wells (QWs) and the SiGe...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28715082626403206268 |