Studies of Materials, Device Structures and Device Processing for Oxide Thin Film Transistors
博士 === 國立臺灣大學 === 電子工程學研究所 === 99 === III Abstract Transparent metal oxide semiconductors are composed of heavy metal cations (HMCs) with electronic configuration of (n-1)d 10 ns 0 (n≧4). The conduction band of metal oxide semiconductors is dominated by the overlap of sp...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10496558390408963566 |