Series and Parallel Measurement of Resistive Random Access Memory with Floating Terminal Effect and 1/f Noise Analysis of Poly-Silicon Thin Film Transistor and α-IGZO Thin Film Transistor
碩士 === 國立臺灣大學 === 電子工程學研究所 === 99 === In this thesis, the first part is the model and physical mechanism of Resistive random access memory (RRAM). RRAM is one of the many types nonvolatile memory, which is the most promising candidate to replace traditional flash memory. External voltage is added on...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/07971496856384107093 |