Enhancement of Operation Temperature of Quantum Dot Infrared Photodetectors by Edge Thinning Structure

• Main Authors: Che-Yu Chang, 張哲宇
• Other Authors: Si-Chen Lee
• Format: Others
• Language: en_US
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/24888055672036551691

碩士 === 國立臺灣大學 === 電子工程學研究所 === 99 === In this thesis, the edge thinning structure with width of 10 μm and thickness of 100~200 nm and the edge thinning structure combined with surface passivation layer Al2O3 with thickness of 10 nm are adopted on n-i-n InAs/GaAs QDIPs to enhance the operation temperature of n-i-n InAs/GaAs quantum dot infrared photodetectors. In the first experiment, edge thinning structure with different depths on QDIPs is investigated. It is found that edge thinning structure at top contact layer and quantum dot layer both can’t significantly reduce the dark current and enhance the operation temperature of QDIPs in this experiment. In the second experiment, the combination of edge thinning structure and surface passivation layer Al2O3 is investigated. It is found that the combination of edge thinning structure and surface passivation layer Al2O3 can’t significantly reduce the dark current and enhance the operation temperature of QDIPs in this experiment. However, the combination of edge thinning structure at quantum dot layer and surface passivation layer Al2O3 can reduce the current by 2 orders of magnitude so the device can work at higher bias voltage. In summary, the edge thinning structure and that combined with surface passivation layer Al2O3 haven’t enhanced the operation temperature of QDIPs. It may require more advanced investigation.