Enhancement of Operation Temperature of Quantum Dot Infrared Photodetectors by Edge Thinning Structure
碩士 === 國立臺灣大學 === 電子工程學研究所 === 99 === In this thesis, the edge thinning structure with width of 10 μm and thickness of 100~200 nm and the edge thinning structure combined with surface passivation layer Al2O3 with thickness of 10 nm are adopted on n-i-n InAs/GaAs QDIPs to enhance the operation te...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/24888055672036551691 |