Growth Model of GaAsSb/GaAs Quantum Well by Using Gas Source Molecular Beam Epitaxy
博士 === 國立臺灣大學 === 電子工程學研究所 === 99 === In this study, gas source molecular beam Epitaxy（GSMBE）was used to grow GaAsSb/GaAs multiple quantum wells with different compositions at various substrate temperatures. In the X-ray measurements, it was found that the Sb content in quantum well is varied with t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87400636754354241865 |