Process Development and Characterization of MOS Capacitor with Ultra-thin Oxide
碩士 === 國立臺灣大學 === 電子工程學研究所 === 99 === Process development and the characterization of MOS capacitor with ultra-thin oxide were explored in this thesis for the ultra-thin gate oxide becomes the mainstream nowadays. The influence of residual ions and gases at the Si/SiO2 interface in metal-oxide-semic...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28318437433064888086 |