Optical Properties of GaAs in Si nano-trench grown by Gas Source Molecular Beam Epitaxay
碩士 === 國立臺灣大學 === 電子工程學研究所 === 99 === We have utilized scanning electron microscopy (SEM), cathodoluminescence (CL) spectroscopy and Raman spectroscopy to investigate heteroepitaxial GaAs on planar Si and patterned Si wafer samples grown by gas source molecular beam epitaxy (GSMBE) system. With the...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71702861680018259593 |