| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 99 === Electric-field-directed growth of n-type and p-type silicon nanowires by vapor-liquid-solid (VLS) mechanism in a low pressure chemical vapor deposition (LPCVD) system is demonstrated. By depositing several isolate metal pads in the growth direction, the local-induced-electric-field is created. Therefore, the SiNWs appeared to experienced stronger electric force and have better directivity. Furthermore, Local-Induced-Electric-Field, Focus Ion Beam and Four-Point-Probe method are used to measure the resistivity and doping concentration of n-type and p-type SiNW.
Dielectrophoresis is used to place SiNW and fabricate SiNW resonator. The oscillation frequency of the resonator is measured by electrical activation method. At last, a frequency tunable SiNW resonator by applying external bending force is presented.
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