Time Resolved TEM Study of Defects Annihilation in Poly-Si Film Grown by Aluminum Induced Crystallization Process
碩士 === 國立清華大學 === 工程與系統科學系 === 99 === Aluminum-induced crystallization (AIC) process was used to prepare the cheaper and has large grain poly-silicon films for thin film solar cell. But it is observed that the high density of intragrain defects form in the poly-Si film during AIC process, that wil...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52472939370312203740 |