A Sub-threshold 9T SRAM Cell for Asynchronous Systems
碩士 === 國立清華大學 === 電機工程學系 === 99 === Static Random Access Memory (SRAM) cell stability is a key challenge in sub-threshold SRAM design, in which read disturb and half-select disturb have been major issues. In this thesis, we propose a 9T cell with 3key features, Static Noise Margin (SNM) free, du...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13191873420969421508 |