Investigation of Lateral High Voltage u/p-GaN MOSFETs and InGaN MOSFETs
碩士 === 國立清華大學 === 電子工程研究所 === 99 === Lateral high-voltage single RESURF GaN MOSFETs on sapphire substrates were investigated and fabricated, with mesa isolation and Zn implantation isolation to avoid surface leakage. We demonstrated depletion-mode uGaN MOSFETs with a maximum drain current densit...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74355390930334410428 |