Solution process synthesize metal oxide colloidal solution for semiconductor thinfilm

• Main Authors: Ou, Han-Szu, 歐漢司
• Other Authors: Chou, Kan-Sen
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/00192311528077777496

碩士 === 國立清華大學 === 化學工程學系 === 99 === In this study, In2O3, Ga2O3 and ZnO pre-cursors were prepared in H2O solution as a cost effective solution for TFT device fabrication. The element ratios of the precipitants were ensured and monitored by solubility and pH value comparison with known pre-cursors. The gathered results were charted and used as a reference for process optimization. Also all three metal oxides could form undesired stoichiometry compounds if the metal elements were clustered during co-precipitation, different solution mixing method were studied to reduce the metal element clustering, and the result is verified by phase separation measured by XRD. Our study shown the powder obtained by adding metal precursor into ammonia solution and mixed at 850 rpm has the lowest degree of phase separation after 1 hour of calcine at 1000 C. The highest diffraction peak of ZnGa2O4 is measured, its intensity is only 4% compare to <101> crystal plane of IGZO4. 0.5g of obtain powder were mixed with 5g 1000μm、5g 200μm、5g 50μm grinding media, use 0.4mL Octylamine as a surfactant, and 3.3mL Chloroform and 0.66 methanol as solvent base. After 20 minutes of physical grinding, two separate set of powders were collected at 588nm 198nm. The solid concentration is 13.51mg/mL. The TFT device use p type Si substrate, thermal oxide is used as insulating layer, titanium use to be source, drain and gate contact electrode which prepared by PVD sputter. The device fabricated use drop casting process at 70℃, after 500℃ 1Hr Ar/H2(97%/3%) annealing treatment, exhibit current on/off ratio 1.3x101.