Investigation of Charge Trapping Characteristic and Reliability Issues for High-k/Metal gate MOSFETs
碩士 === 國立中山大學 === 物理學系研究所 === 99 === Electronic devices such as high power devices, microprocessors and memories in integrated circuit are primarily composed of metal-oxide-semiconductor field effect transistors (MOSFETs), due to the advantages of low cost, low power consumption and easy to scale do...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73320578482266040514 |