Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices
博士 === 國立中山大學 === 物理學系研究所 === 99 === In first part, the supercritical CO2 (SCCO2) fluid technology is employed to improve the device properties of ZnO TFT. The SCCO2 fluid exhibits liquid-like property, which has excellent transport ability. Furthermore, the SCCO2 fluid has gas-like and high-pressur...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/82778876563558987450 |