The Characterization of Sn-doped SiO2 Thin Film Resistance Random Access Memory
碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 99 === In this study, The bottom electrode（TiN）, middle insulator （Sn：SiO2）, and top electrode （Pt） were deposited respectively by sputtering technique for fabricating the resistive random access memory with metal-insulator-metal structure. Experimental results...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/09310167169118169311 |