Semiconductor Laser using Sputtered SiO2 and Quantum Well Intermixing
碩士 === 國立中山大學 === 光電工程學系研究所 === 99 === In this work , impurity free vacancy diffusion (IFVD) quantum well intermixing(QWI) technology by high thermal-expansion-induced stress is used to perform bandgap engineering. In this paper, 1530nm InGaAsP multiple QWs sandwiched by p-InP (2μm thickeneess, top)...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93168018825643503023 |