Investigation of InGaP/GaAs-Based High Electron Mobility Transistors
碩士 === 國立高雄師範大學 === 電子工程學系 === 99 === In this thesis, we analyze and compare the characteristics of the two kind of InGaP/GaAs single delta-doped HEMTs and the three kind of InGaP/GaAs double delta-doped HEMTs. Due to the considerable conductance-band discontinuity at InGaP/GaAs heterojunction, it c...
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| Language: | zh-TW |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54890986201138311017 |