Investigation of the Dimension Effects of 30-nm Below Multiple-Gate SOI MOSFETs by TCAD Simulation
碩士 === 國立東華大學 === 電機工程學系 === 99 === In this paper we use the commercial semiconductor device simulator, Sentaurus, to simulate the electrical characteristics of sub-30 nm multiple-gate (MG) Silicon on Insulator metal-oxide-semiconductor field-effect transistors (MOSFETs). The gate configurations...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04660064539090002637 |