Applications of CMOS MEMS Process Integration

• Main Authors: Meng-Hung Tsai, 蔡孟宏
• Other Authors: Chih-Hsiung Shen
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/21382880135893151049

碩士 === 國立彰化師範大學 === 機電工程學系 === 99 === Abstract The most favorite advantages of Complementary Metal-Oxide- Semiconductor (CMOS) are based on its standard material and fabrication and therefore it will make semiconductor manufacturers low costs and high-rate production. Nevertheless MEMS of CMOS fabrication has some drawbacks which limit its applications in sensors and actuators. Comparisons with most of the semiconductor technology, the CMOS fabrication will meet limitations and challenges. The first is that MEMS components need more complicated materials and layers. The second is that designing MEMS structure requires special fabrication processes and these processes are not in the original COMS processes. In this thesis, we propose several advanced fabrication integrating with CMOS-compatible process. It will bring profits of standardized production and has the high performance and reliability of MEMS. We use 0.35μm 2P4M CMOS IC compatible process and propose the new post fabrication for COMS MEMS resonators, infrared absorption sensors and CO gas sensors. Besides we investigate the sacrificial layer of sensors and measure the properties of MEMS resonator, CO gas sensor and so on. Key words： MEMS resonator, CO gas sensor, sacrificial layer