Development of sub-micron InGaAsSb base double heterojunction bipolar transistors and investigation on emitter size effect
碩士 === 國立中央大學 === 電機工程研究所 === 99 === Recently a new type of heterojunction bipolar transistors (HBTs) with InGaAsSb base was proposed by our group. This novel transistor exhibited low turn-on voltage, high collector current density, high average electron velocity, low specific contact resistivity, a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/16670849885997047935 |