Technology Development of Novel Naonwire Tunneling Field-Effect Transistor

Technology Development of Novel Naonwire Tunneling Field-Effect Transistor

碩士 === 國立中央大學 === 電機工程研究所 === 99 === This thesis integrated one dimension poly-Si nanowire and PIN structure into a device, which fabricated nanowire tunneling field-effect transistor (NWT-FET). We are looking forward to improving short channel effects (SCE), subthreshold slope, (S.S.) and static le...

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Bibliographic Details
Main Authors:	Ming-Shih Lee, 李明師
Other Authors:	Pei-Wen Li
Format:	Others
Language:	zh-TW
Published:	2011
Online Access:	http://ndltd.ncl.edu.tw/handle/48487529732558268290

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