Technology Development of Novel Naonwire Tunneling Field-Effect Transistor
碩士 === 國立中央大學 === 電機工程研究所 === 99 === This thesis integrated one dimension poly-Si nanowire and PIN structure into a device, which fabricated nanowire tunneling field-effect transistor (NWT-FET). We are looking forward to improving short channel effects (SCE), subthreshold slope, (S.S.) and static le...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48487529732558268290 |