Potential Analysis of Two Dimension I-V Discussion of Three Dimension for Triple-Gate MOSFET
碩士 === 國立中央大學 === 電機工程研究所 === 99 === In this thesis, we design a 2-D device simulator to simulate the triple gate’s potential distribution and electron distribution , then discuss the corner effect of triple gate’s structure. We add Poisson’s Equation to analyze 2-D potential distributions and simul...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01317524686625952748 |