Growth of Ge/Si thin film with ultrashort pulse laser deposition and its study
碩士 === 國立中央大學 === 物理研究所 === 99 === We show that the islands formed in Stranski-Krastanow (SKI growth of Ge on Si(100) are initially dislocation-free. Island formation in true SK growth should be driven by strain relaxation in large, dislocated islands. Coherent SK growth is explained in terms of ela...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41072896999924935302 |