Pattern morphology on patterned sapphire substrate and its effect on the GaN epitaxial growth

Pattern morphology on patterned sapphire substrate and its effect on the GaN epitaxial growth

碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 99 === The purpose of this study is to investigate the effect of pattern morphology on the patterned sapphire substrate (PSS) for GaN epitaxial growth. Two-step wet etching technique was used to fabricate PSS. Pitch 3µm pyramidal-like patterns of convex a...

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Bibliographic Details
Main Authors:	Hsiao, Feng Ching, 蕭豐慶
Other Authors:	Wu, Yew Chung Sermon
Format:	Others
Language:	zh-TW
Published:	2010
Online Access:	http://ndltd.ncl.edu.tw/handle/44409671978757543504

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