Pattern morphology on patterned sapphire substrate and its effect on the GaN epitaxial growth
碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 99 === The purpose of this study is to investigate the effect of pattern morphology on the patterned sapphire substrate (PSS) for GaN epitaxial growth. Two-step wet etching technique was used to fabricate PSS. Pitch 3µm pyramidal-like patterns of convex a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44409671978757543504 |