Fabrication and investigation of semipolar {10-11} InGaN/GaN nanopyramid light emitting diode
碩士 === 國立交通大學 === 光電工程學系 === 99 === In this study, we presented high performance green emission semipolar {10-11} GaN-based nanopyramid light emitting diodes (LEDs) grown on c-plane sapphire substrate by selective area epitaxy (SAE). The transmission electron microscopy (TEM) images suggest that the...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95048237110271238586 |