2D/3D CFD Simulation of Metal Oxide Chemical Vapor Deposition (MOCVD) of GaN
碩士 === 國立交通大學 === 機械工程學系 === 99 === Metal organic chemical vapor deposition (MOCVD) process of GaN in the vertical reactor is studied by various computational fluid dynamics (CFD) simulations under 2D condition. First, with different pressure, figuring out that flow distribution at 100 Torr is stabl...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18622910568436707550 |