Carrier dynamics and band alignment of GaAsSb Capped InAs Quantum Dots
碩士 === 國立交通大學 === 電子物理系所 === 99 === The optical properties of GaAsSb-capped InAs quantum dots (QDs) with different capping layer thickness are investigated. Both the emission energy and the recombination lifetime of the QDs are found to be correlated with the capping layer thickness. Theoretical cal...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/34864449947347294953 |