The trap analysis and establishment of electron transport model for SONOS memory with embedded silicon nanocrystals in nitride
碩士 === 國立交通大學 === 電子物理系所 === 99 === We analyze the trap states and establish the electron transport model for SONOS memories with embedded Si-NCs in Si3N4. Initially, the distributions of Si-SiO2 interface state density (Dit) under different growth conditions are obtained by capacitance-voltage (C-V...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92585393274739196468 |