The Influence of Nitrogen Composition Fluctuation on InAs Self-assembled Quantum Dots with Incorporation of A High Nitrogen Content
碩士 === 國立交通大學 === 電子物理系所 === 99 === In this study, the nitrogen (N) composition fluctuation effect of a high nitrogen incorporation into self-assemble InAs quantum dots (QDs) grown on GaAs substrate by molecular beam epitaxy (MBE) on S-K mode is investigated by using current-voltage measurement...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48925899935020854702 |