Positive Bias Temperature Instability(PBTI) Analysis and Simulation in 22 nm High-k Metal Gate nMOSFETs
碩士 === 國立交通大學 === 電子研究所 === 99 === In this dissertation a new method to predict the post-stress threshold voltage distribution is introduced. We proposed the fast transient measurement, which minimizes the switching delay between stress and measurement. Consequently, a staircase-like post-positive b...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64063337299664947310 |