Improvement of Unipolar Resistive Switching Characteristics in ZrO2 Thin Films with Embedded Metal Layer
碩士 === 國立交通大學 === 電子研究所 === 99 === Many types of consumer electronics products require high-capacity memory with the development of the technology. The demand of nonvolatile memory (NVM) increases significantly with the years in the semiconductor industry. The mainstream of NVM nowadays is flash mem...
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| Format: | Others |
| Language: | zh-TW |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76736657791892968965 |